GaN-BASED COMPOUND SEMICONDUCTOR LIGHT RECEIVING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a high-performance GaN-based compound semiconductor light receiving element that can be used as a fire sensor, by forming a nitride semiconductor substrate layer in which a hetero ELO technique is applied. SOLUTION: The GaN-based compound semiconductor light receiving element comprises an AlN low-temperature deposition buffer layer 11 on a substrate 1; a first GaN semiconductor layer 12; a mask pattern layer 13 for partially covering the surface of the first semiconductor layer 12; a seed crystal layer 14 mainly made of GaN formed in a chevron shape having an inclination surface along the edge section of the mask pattern layer 13; a foundation semiconductor layer 10 having a second semiconductor layer 15 mainly made of AlGaN formed directly on the seed crystal layer 14; and a light reception layer 20 mainly made of AlGaN having a PIN junction type photodiode structure formed on the foundation semiconductor layer 10. COPYRIGHT: (C)2005,JPO&NCIPI