| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which can achieve high output by a simple structure even if the confinement factor in an active layer is reduced, and which hardly has a change in mode. SOLUTION: The semiconductor laser has on an InP semiconductor substrate 11 an active layer 14 including a multiple quantum well structure, an n-type clad layer 32 and a p-type InP clad layer 18 with the active layer 14 in-between, and a p-electrode 20 and an n-electrode 21 for injecting a current into the active layer 14. Further, the laser has a light emission end face consists of an end face 22b coated with a film having a high reflection factor, and an end face 22a coated with a film having a low reflection factor. The n-type clad layer 32 is formed of InGaAsP. Either the p-electrode 20 or n-electrode 21 is divided into a plurality of parts in the direction of stripe geometry of the active layer 14. The current density injected into the active layer 14 from each of the divided parts of the electrode increases from the end face 22b coated with the film having a high reflection factor toward the end face 22a coated with a film having a low reflection factor. COPYRIGHT: (C)2005,JPO&NCIPI
|
