| 摘要 |
Provided is a polishing solution for chemical mechanical polishing the metal of a semiconductor device which is reduced in dishing and is improved in copper/tantalum selectivity. A polishing solution comprises at least one compound selected from the group consisting of tetrazole or triazole derivatives represented by formula I, II and III, wherein Ra is a sulfo group, an amino group, a phosphono group (-PO3H2), a carbamoyl group (-CONRR'), a carbonamide group (-NHCOR''), a sulfamoyl group (-SO2NH2), or a sulfonamide group (-NHSO2R''); R^b is a hydroxyl group, a carboxyl group, a sulfo group, an amino group, a phosphono group (-PO3H2), a carbamoyl group (-CONRR'), a carbonamide group (-NHCOR''), a sulfamoyl group (-SO2NH2), or a sulfonamide group (-NHSO2R''); Lb is a divalent linking group; R^c and R^d are independently H or a substituent, and one of R^c and R^d is a hydroxyl group, a carboxyl group, a sulfo group, an amino group, a phosphono group (-PO3H2), a carbamoyl group (-CONRR'), a carbonamide group (-NHCOR''), a sulfamoyl group (-SO2NH2), a sulfonamide group (-NHSO2R''), or -La-Re; L^a is a divalent linking group; R^e is a hydroxyl group, a carboxyl group, a sulfo group, an amino group, a phosphono group (-PO3H2), a carbamoyl group (-CONRR'), a carbonamide group (-NHCOR''), a sulfamoyl group (-SO2NH2), or a sulfonamide group (-NHSO2R''); R and R' are independently H, an alkyl group or an aryl group; and R'' is an alkyl group or an aryl group.
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