发明名称 |
Nonvolatile semiconductor memory device having uniform operational characteristics for memory cells |
摘要 |
A NAND-type nonvolatile semiconductor memory device comprising a cell string that comprises a dummy cell interposed between and connected in series to a string selection transistor and a nonvolatile memory cell is provided. The NAND-type nonvolatile semiconductor memory device further comprises a dummy word line driver adapted to activate a dummy word line to gate the dummy cell.
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申请公布号 |
US7272049(B2) |
申请公布日期 |
2007.09.18 |
申请号 |
US20050317300 |
申请日期 |
2005.12.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG DONG KU;BYEON DAE SEOK;LIM YOUNG HO |
分类号 |
G11C16/06 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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