METHOD FOR MANUFACTURING SOI WAFER, AND SOI WAFER

摘要

PROBLEM TO BE SOLVED: To efficiently form an SOI wafer with high throughput, in which the roughness of the surface of the SOI layer lifted off by a hydrogen ion delamination method is improved over the range from long period to short period without generation of pits caused by a COP in the SOI layer. SOLUTION: The method of manufacturing the SOI wafer by the hydrogen delamination method includes at least a step of bonding a base wafer to a bond wafer having a micro bubble layer formed by gas ion implantation, and a step of delaminating the wafer having an SOI layer by using the micro bubble layer as a boundary. An FZ wafer or an epitaxial wafer or at least a CZ wafer whose surface COP is reduced is used as the bond wafer. The wafer having the SOI layer is heat treated after the delamination step in a batch furnace in an atmosphere containing hydrogen or argon. COPYRIGHT: (C)2008,JPO&INPIT