| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a dielectric thin film having a high reliability and an excellent characteristic, as a component. SOLUTION: A capacitance insulating film comprising a laminate film of hafnium oxide films 102, 103, 104 of first to third layers is formed on a lower electrode 101 of a capacitor, an oxygen ratio of the hafnium oxide films 102, 104 of the first and third layers to hafnium is greater than the oxygen ratio of the hafnium oxide film 103 of the second layer to hafnium. Since the capacitance insulating film comprises the laminate film consisting of the hafnium oxide films 102, 104 of the first and third layers having a great barrier height, and the hafnium oxide film 103 of the second layer having a great dielectric constant, it is possible to materialize the capacitor having a small leakage current and a large capacitance. COPYRIGHT: (C)2008,JPO&INPIT
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