Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications

摘要

A method for producing a wafer bonded structure between (Al, In, Ga)N and Zn(S,Se). A highly reflective and conductive distributed Bragg reflector (DBR) for relatively short optical wave lengths can be fabricated using Zn(S,Se) and MgS/(Zn, Cd)Se materials. Using wafer bonding techniques, these high-quality DBR structures can be combined with a GaN-based optical device structure.