发明名称 BIDIRECTIONAL SWITCH MODULE
摘要 <p><P>PROBLEM TO BE SOLVED: To solve a problem in a conventional semiconductor module that using an insulating substrate or a wiring layer formed on the insulating substrate causes cost increase. <P>SOLUTION: A first semiconductor element having a junction electrode to be connected to a first node of a bidirectional switch circuit is mounted on a first metal base plate as a thermal diffusion plate. A second semiconductor element having a junction electrode to be connected to a second node of the bidirectional switch circuit is mounted on a second metal base plate as a thermal diffusion plate. The junction electrode of the first semiconductor element is set to have the same potential as the first metal base plate, and the junction electrode of the second semiconductor element is set to have the same potential as the second metal base plate. The metal bases and the nonjunction electrodes of the semiconductor elements are connected each other by thin metal wires to form the bidirectional switch circuit. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008166461(A) 申请公布日期 2008.07.17
申请号 JP20060353699 申请日期 2006.12.28
申请人 HITACHI LTD;RENESAS TECHNOLOGY CORP 发明人 OSAWA MICHITAKA;KANAZAWA TAKAMITSU
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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