| 摘要 |
The fully depleted thin film transistor (TFT) formed on a semiconductor film ( 103 ) on an insulator ( 101 ) is, in order to improve characteristics of the fully depleted thin film transistor, formed including a gate electrode formed over the semiconductor film having a gate insulating film ( 107 ) therebetween, source-drain regions ( 111 ) formed in the semiconductor film at both sides of the gate electrode, a channel region (CH) located between the source-drain regions ( 111 ), and a body contact region ( 113 ) adjacent to the channel region. A substrate floating effect can be reduced, even if the gate electrode is miniaturized, by providing a body contact region so as to withdraw excess carriers generated in the channel region through the body contact region.
|
