| 摘要 |
A semiconductor device and a method of formation thereof are provided to form a first support layer of line-shape on a cell region and form a second support layer of a box type exposing a cell region on a peripheral circuit region so that a leaning phenomenon of bottom electrodes improved in a dip out process and subsequent processes are easily performed. Bottom electrodes(123) are formed to every direction in order to be crossed over each other on a semiconductor board of a cell region. A first support layer(125a) is formed into alternation on space of a line-shape positioned between top and bottom of the bottom electrodes which is left and right arranged with a line-shape and is connected with the side wall of the bottom electrodes in which the first support layer is adjacent. A second support layer(125b) having a box type which exposes a cell region(1000a) with being coated onto a peripheral circuit region(1000b) is connected with the end tip of the first support layer. A protective film(127) is formed into designated line width on the peripheral circuit region positioned in border with the cell region.
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