| 摘要 |
PURPOSE:To enable to reduce the threshold current and to improve the characteristics of quantum efficiency and so forth by a method wherein the P type confinement layer consists of a semiconductor made of a compound comprising indium, gallium, aluminum and arsenic and has a strain super lattice structure, wherein the difference between the energy level of the light-emitting region and that in the bottom of the conduction band increases toward the light-emitting region. CONSTITUTION:A P type confinement layer consists of a P type strain super lattice structure 4 and a P type InAlAs layer 5. The strain super lattice structure 4 has a structure, laminated with plural In1-x-yGaxAlyAs layers, each having a different composition, and consists of the following layers 4a-4c, for example, in order from the side of an active layer 3: 4a; x=0.20, y=0.47, 4b; x=0.14, y=0.47, 4c; x=0.07, y=0.47. Provided that, the thickness of each layer is set as about 20mum and each layer is made to grow in order on the active layer 3 comprising 0.53% of In and 0.47% of Ga. |
