| 摘要 |
PURPOSE:To form a lateral P-N-P transistor having the more superior characteristics by a method wherein a part of a collector provided in the circumference of an emitter is cut apart, and a diffusion layer for base contact and a contact window are formed at this part. CONSTITUTION:A collector region 15 is made as not to exist at the part whereat an emitter region 14 is facing with a base electrode connecting region 16, and the base electrode connecting the region 16 is provided in place of the collector region as to approach the emitter region 14. Because a part of the collector 15 is removed, and the base electrode connecting region 16 is provided, a base current is made to flow more easily to the part facing to the base electrode connecting region 16 of the emitter 14 than the part directly under the emitter 14. Accordingly, implantation of minority carriers from the mitter 14 is increased at the periphery of the metal 14, the distance to reach the collector is shortened, and the amplification factor of the current is increased. Moreover, base resistance is reduced also because the base electrode connecting region 16 is provided in the neighborhood of the emitter 14. |
