| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that two kinds of distorted films covering an NMOS and a PMOS overlap each other because of a positional shift to create an excessive film thickness or a gap between both distorted films. SOLUTION: A tensile distortion film is formed to cover a PMOS and an NMOS. The tensile distortion film is eliminated in an area where the PMOS is disposed, and is left intact in an area where the NMOS is disposed. A compressed distortion film is formed over the entire surface. An exposed portion of the compressed distortion film is etched partway in the direction of thickness of the exposed portion, using a mask covering the area where the PMOS is disposed while not covering the where the NMOS is disposed. The compressed distortion film is eliminated in the area where the NMOS is disposed, using the mask covering the area where the PMOS is disposed while not covering the where the NMOS is disposed. One of two types of masks overlap at least the edge of part of the patterned tensile distortion film, while the other is separated from the edge in the direction of interior of the surface. When the compressed distortion film is eliminated, part of the compressed distortion film is left intact in the area covered by one of the masks. COPYRIGHT: (C)2010,JPO&INPIT |
