Semiconductor light-receiving device and semiconductor light-receiving device array

摘要

A semiconductor light-receiving device includes a substrate having a principal surface including first and second areas; a post disposed on the first area, the post including a semiconductor mesa; and a resin layer disposed on the second area in contact with a side surface of the post. The resin layer has, on a ray extending from a first point within the first area through a second point within the second area, a first thickness and a second thickness respectively at a third point and a fourth point that are located within the second area at different distances from the first point. The distance from the first point to the fourth point is larger than the distance from the first point to the third point. The first thickness is larger than the second thickness. The resin layer has a surface that monotonically changes from the first thickness to the second thickness.

主权项

1. A semiconductor light-receiving device comprising:
a substrate having a principal surface and a back surface opposite the principle surface, the principle surface including a first area and a second area surrounding the first area, and the back surface providing an incident surface for signal light entering the semiconductor light-receiving device; a post disposed on the first area of the substrate, the post including a semiconductor mesa having a side surface and including an optical absorption layer; and a resin layer disposed on the second area of the substrate in contact with a side surface of the post, the resin layer having a surface configured to reflect signal light passing into the resin layer from the incident surface to the side surface of the mesa.