Extended-drain MOS transistor in a thin film on insulator

摘要

An extended-drain transistor is formed in a semiconductor layer arranged on one side of an insulating layer with a semiconductor region being arranged on the other side of the insulating layer. The semiconductor region includes a first portion of a first conductivity type arranged in front of the source and at least one larger portion of the gate and a second portion of a second conductivity type arranged in front of at least the larger portion of the extended drain region, each of the first and second portions being coupled to a connection pad.

主权项

1. An extended-drain transistor, comprising:
a thin semiconductor layer arranged on one side of a thin insulating layer and supporting source, drain and channel regions for the transistor, a semiconductor region arranged on the other side of the insulating layer, wherein the semiconductor region comprises:
a first portion of a first conductivity type arranged below the source region of the transistor and below at least a portion of a gate of the transistor, anda second portion of a second conductivity type arranged adjacent the first portion and below an extended drain of the drain region; andfirst and second electrical contacts to the first and second portions, respectively, said first electrical contact comprising a third portion of the first conductivity type more highly doped than the first portion and said second electrical contact comprising a fourth portion of the second conductivity type more highly doped than the second portion.