Methods of manufacturing semiconductor devices and electronic devices

摘要

In a method of manufacturing a semiconductor device, an isolation layer pattern is formed on a substrate to define a field region covered by the isolation layer pattern and first and second active regions that is not covered by the isolation layer pattern and protrudes from the isolation layer pattern. A first anti-reflective layer is formed on the isolation layer pattern. A first photoresist layer is formed on the first and second active regions of the substrate and the first anti-reflective layer. The first photoresist layer is partially etched to form a first photoresist pattern covering the first active region. Impurities are implanted into the second active region to form a first impurity region.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming an isolation layer pattern on a substrate to define a field region and first and second active regions, the field region being covered by the isolation layer pattern, and the first and second active regions not being covered by the isolation layer pattern and protruding from the isolation layer pattern; forming a first anti-reflective layer on the isolation layer pattern; forming a first photoresist layer on the first and second active regions of the substrate and the first anti-reflective layer; partially etching the first photoresist layer to form a first photoresist pattern covering the first active region; and implanting impurities through the first anti-reflective layer into the second active region to form a first impurity region, wherein the forming the isolation layer pattern comprises: forming a first trench on an upper portion of the substrate; forming an isolation layer in the first trench to fill the first trench; and removing an upper portion of the isolation layer to expose an upper portion of the first trench.