| 摘要 |
A method for operating non-volatile memory device is provided. The method includes applying a first voltage level to a word line connected to a memory cell, applying a second voltage level to the word line for a first time period, performing a read operation on the memory cell during the first time period, and discharging the word line for a second time period to a third voltage level greater than or equal to about 1V. The method also includes performing an erase word line recovery on a plurality of blocks of memory cells during the erase operation, and prior to an erase phase. The erase word line recovery substantially discharges all word lines of the plurality of blocks of memory cells. |
