发明名称 |
FARADAY ROTATOR |
摘要 |
[Object] To provide a Faraday rotator excellent in productivity and also hardly causing an isolation function of an optical isolator to deteriorate even when the Faraday rotator is used in a high-power laser with a wavelength of 1.1 μm or less and an output of 1 W or more. [Solving Means] The Faraday rotator comprises: a non-magnetic garnet substrate 4; bismuth-substituted rare-earth iron garnet films 1 grown respectively on both surfaces of the non-magnetic garnet substrate by a liquid phase epitaxial method; and sapphire crystal substrates 2 bonded respectively to outer surfaces of the bismuth-substituted rare-earth iron garnet films, and configured to dissipate heat. The Faraday rotator is characterized in that the bismuth-substituted rare-earth iron garnet films have an absorption coefficient of 9 cm−1 or less for light at a wavelength of 1.06 μm, and that the bismuth-substituted rare-earth iron garnet films grown on the respective surfaces of the non-magnetic garnet substrate differ from each other in film thickness by 10 μm or less. |
申请公布号 |
US2016195737(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201414910807 |
申请日期 |
2014.07.22 |
申请人 |
SUMITOMO METAL MINING CO., LTD. |
发明人 |
NAKAMURA Nobuo |
分类号 |
G02F1/09;G02F1/01;G02F1/00 |
主分类号 |
G02F1/09 |
代理机构 |
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代理人 |
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主权项 |
1. A Faraday rotator constituting a part of an optical isolator, comprising:
a non-magnetic garnet substrate; bismuth-substituted rare-earth iron garnet films grown respectively on both surfaces of the non-magnetic garnet substrate by a liquid phase epitaxial method; and sapphire crystal substrates bonded respectively to outer surfaces of the bismuth-substituted rare-earth iron garnet films, and configured to dissipate heat, the Faraday rotator characterized in that the bismuth-substituted rare-earth iron garnet films have an absorption coefficient of 9 cm−1 or less for light at a wavelength of 1.06 μm, and the bismuth-substituted rare-earth iron garnet films grown on the respective surfaces of the non-magnetic garnet substrate differ from each other in film thickness by 10 μm or less. |
地址 |
Tokyo JP |