发明名称 FARADAY ROTATOR
摘要 [Object] To provide a Faraday rotator excellent in productivity and also hardly causing an isolation function of an optical isolator to deteriorate even when the Faraday rotator is used in a high-power laser with a wavelength of 1.1 μm or less and an output of 1 W or more. [Solving Means] The Faraday rotator comprises: a non-magnetic garnet substrate 4; bismuth-substituted rare-earth iron garnet films 1 grown respectively on both surfaces of the non-magnetic garnet substrate by a liquid phase epitaxial method; and sapphire crystal substrates 2 bonded respectively to outer surfaces of the bismuth-substituted rare-earth iron garnet films, and configured to dissipate heat. The Faraday rotator is characterized in that the bismuth-substituted rare-earth iron garnet films have an absorption coefficient of 9 cm−1 or less for light at a wavelength of 1.06 μm, and that the bismuth-substituted rare-earth iron garnet films grown on the respective surfaces of the non-magnetic garnet substrate differ from each other in film thickness by 10 μm or less.
申请公布号 US2016195737(A1) 申请公布日期 2016.07.07
申请号 US201414910807 申请日期 2014.07.22
申请人 SUMITOMO METAL MINING CO., LTD. 发明人 NAKAMURA Nobuo
分类号 G02F1/09;G02F1/01;G02F1/00 主分类号 G02F1/09
代理机构 代理人
主权项 1. A Faraday rotator constituting a part of an optical isolator, comprising: a non-magnetic garnet substrate; bismuth-substituted rare-earth iron garnet films grown respectively on both surfaces of the non-magnetic garnet substrate by a liquid phase epitaxial method; and sapphire crystal substrates bonded respectively to outer surfaces of the bismuth-substituted rare-earth iron garnet films, and configured to dissipate heat, the Faraday rotator characterized in that the bismuth-substituted rare-earth iron garnet films have an absorption coefficient of 9 cm−1 or less for light at a wavelength of 1.06 μm, and the bismuth-substituted rare-earth iron garnet films grown on the respective surfaces of the non-magnetic garnet substrate differ from each other in film thickness by 10 μm or less.
地址 Tokyo JP