| 摘要 |
The purpose of the present invention is to provide a display device in which an oxide thin film transistor and an LTPS thin film transistor are applied to a driving circuit of a pixel or a non-display region in the display device. Provided is the display device. A polycrystalline silicon layer is arranged on a substrate. A first metal layer is arranged in the polycrystalline silicon layer. A metal oxide layer is arranged in the first metal layer. A second metal layer is arranged in a metal oxide layer. The second metal layer overlaps the first metal layer. The first metal layer and the second metal layer are a gate line connected to different thin film transistors. Therefore, a plurality of gate lines is arranged to overlap each other in the display device. Therefore, a display device has high resolutions, an improved penetration ratio, and the reduced size of the non-display region by reducing a surface in which a circuit unit is occupied in the display device. |
