| 摘要 |
Disclosed is a Ni—Si—Co copper alloy that is suitable for use for various kinds of electronic parts and has particularly good uniform plating adhesion properties. The copper alloy for electronic materials comprises Ni: 1.0-2.5 mass %, Co: 0.5-2.5 mass % and Si: 0.3-1.2 mass % and the remainder is made of Cu and unavoidable impurities. For the copper alloy for electronic materials, the mean crystal size, at the plate thickness center, is 20 μm or less, and there are five or fewer crystal particles that contact the surface and have a long axis of 45 μm or greater per 1 mm rolling direction length. The copper alloy may comprise a maximum of 0.5 mass % Cr and may comprise a maximum in total of 2.0 mass % of one, two or more selected from a group comprising Mg, P, As, Sb, Be, B, Mn, Sn, Ti, Zr, Al, Fe, Zn and Ag. |
| 主权项 |
1. A copper alloy for electronic materials characterized in that said copper alloy contains Ni: 1.0-2.5% by mass, Co: 0.5-2.5% by mass, Si: 0.3-1.2% by mass, Cr: 0.09 to 0.5% by mass, and the remainder consisting of Cu and unavoidable impurities, wherein the average grain size at the plate thickness center is 20 μm or less, and wherein the number of crystal grains contacting the surface which have a major axis of 45 μm or greater is 5 or less per 1 mm in a rolling direction length, said rolling direction length being the direction in which the copper alloy was rolled during formation from an ingot. |
