Verfahren zur Steuerung der Stromverstaerkung einer lateralen Teilstruktur eines planaren Transistors oder einer planaren gesteuerten Vierschichtdiode mit mindestens zwei Emittern

摘要

The method is for adjusting the current amplification factor of an integrated circuit comprising one or more serial lateral transistor zones of a vertical planar transistor. The circuit has collector zone and two emitter zones extending into the base zone. The construction is suitable for both planar transistor and planar thyristor units. The control is introduced by using a lateral zone in the vertically assembled structure. A constructed element could contain a combination of a two emitter transistor and a four zone diode. The semiconductor substrate (61) contains a subcollector zone (62) which can work to diffusion zones (63) on either side but isolated from it. A switching transistor can be formed from the lateral emitters (N3) and an associated P zone (P1). The multi-emitter portion can be operated in a switching mode as a self-holding relay by selecting an emitter from those offered (N1, P2, N2 or N1, P2, N3), as relay bringing in the other emitter circuits as discrete relay contact circuits.