| 摘要 |
PURPOSE:To carry out accurate feedback to an infrared lamp beam irradiation means to realize a heating process under a good condition by detecting temperature of semiconductor substrate material with a temperature detecting means provided to a semiconductor substrate material setting part and controlling a control means connected to the infrared lamp beam irradiating means. CONSTITUTION:The ion-implanted region can be activated electrically at high temperature and within a short period by irradiating a semiconductor substrate material 1 into which ions are implanted using an infrared lamp 4 with irradiation of the infrared lamp beam 4 and by heating it, and simultaneously uniformity of sheet resistance in the semiconductor substrate material 1 can also be attained with uniform irradiation of infrared lamp beam 4. Particularly, in case of a boron-implanted region, control of a distribution of implanted regions and formation of a shallow junction can be realized. On the other hand, the heating condition is controlled by detecting heating temperature of semiconductor substrate material 1 by irradiation of infrared lamp beam 4 for the annealing. Thereby, the annealing process can be realized under the good conditions. |
