| 摘要 |
PURPOSE:To prevent infiltration of the impurities originated in an inner wall material and to obtain a good-quality deposited film by coating the inner wall of a chamber constituting a deposition space for forming a film and a decomposition space for generating active species with a deposited film constituting material having a specified resistance. CONSTITUTION:The raw gas for forming a precursor is supplied from a gas inlet pipe 113, and converted to a precursor in the decomposition space B. The raw gas for forming active species is supplied from a gas inlet pipe 109, and activated in the decomposition space C. The active species and precursor are separately introduced into the deposition space A to form a deposited film on a substrate 103. In this case, the inner wall of the chambers 101 and 121 constituting the spaces A and C is previously coated with the thin film of the element or component having >=10<6>OMEGA.cm resistance and used for forming the deposited film. |
