发明名称 |
Method for arc discharge plasma vapor deposition of diamond |
摘要 |
A method for vapor deposition of diamond by effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device, radicalizing a gaseous carbon compound by feeding the gaseous carbon compound into a generated plasma jet, and permitting the radicalized plasma jet to impinge on a substrate to be treated, whereby a film of diamond is formed on the substrate.
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申请公布号 |
US5368897(A) |
申请公布日期 |
1994.11.29 |
申请号 |
US19880177504 |
申请日期 |
1988.04.04 |
申请人 |
FUJITSU LIMITED |
发明人 |
KURIHARA, KAZUAKI;SASAKI, KENICHI;KAWARADA, MOTONOBU;KOSHINO, NAGAAKI |
分类号 |
C23C16/27;C23C16/513;C30B25/02;(IPC1-7):B05D1/02 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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