发明名称 Method for arc discharge plasma vapor deposition of diamond
摘要 A method for vapor deposition of diamond by effecting an arc discharge while feeding a discharge gas between an anode and a cathode of a thermal plasma chemical vapor deposition device, radicalizing a gaseous carbon compound by feeding the gaseous carbon compound into a generated plasma jet, and permitting the radicalized plasma jet to impinge on a substrate to be treated, whereby a film of diamond is formed on the substrate.
申请公布号 US5368897(A) 申请公布日期 1994.11.29
申请号 US19880177504 申请日期 1988.04.04
申请人 FUJITSU LIMITED 发明人 KURIHARA, KAZUAKI;SASAKI, KENICHI;KAWARADA, MOTONOBU;KOSHINO, NAGAAKI
分类号 C23C16/27;C23C16/513;C30B25/02;(IPC1-7):B05D1/02 主分类号 C23C16/27
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