REDUCED LEAKAGE ANTIFUSE STRUCTURE AND FABRICATION METHOD

摘要

An antifuse (10) comprises an antifuse material (24) disposed between a lower conductive electrode (14) and an upper conductive electrode (26). The antifuse material (24) comprises a layer of amorphous silicon (20) disposed between two layers of silicon nitride (16, 20). A thin layer of silicon dioxide (18) is disposed between the layer of amorphous silicon (20) and one of the silicon nitride layers (16, 22).