| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a device which protects an electronic device from electrostatic discharge(ESD) using a silicon control rectifier(SCR). SOLUTION: A p-well 23 and an n-well 25 are formed on a substrate 22, p<+> and n<+> contact regions 29, 31, 35 and 37 are provided, and n<+> or P<+> drain tap 27 is provided between the p-well 23 and the n-well 25. The p-well 23 and the n-well 25 can be formed entailing or not entailing an epitaxial layer by conducting a retrograde process or a conventional process. The first electrode 51 is connected to the p<+> and n<+> contact region, and it is connected to the gate oxide region 43 of the p-well 23 through a polysilicon region 53. The poly length of the polysilicon region 53 is small and it is under control. The second electrode 61 is connected to an electric circuit to be protected against the p<+> and n<+> contact regions of the n-well 25 and an ESD. |
