| 发明名称 |
METHOD OF MAKING AN InAsSb/InAsSbP DIODE LASER |
| 摘要 |
InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 mu m to 5 mu m is possible by varying the ratio of As:Sb in the active layer.
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| 申请公布号 |
WO9812779(A1) |
申请公布日期 |
1998.03.26 |
| 申请号 |
WO1997US16969 |
申请日期 |
1997.09.19 |
| 申请人 |
NORTHWESTERN UNIVERSITY |
发明人 |
RAZEGHI, MANIJEH |
| 分类号 |
H01L21/205;H01S5/343;(IPC1-7):H01S3/06;H01S3/085;H01S3/18 |
主分类号 |
H01L21/205 |
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