Electrically confined VCSEL

摘要

A semiconductive substrate (101) with a surface (102) having a first stack of distributed Bragg reflectors (109) disposed on the surface (102) of the semiconductive substrate (101) that has dot patterned features (252 and 354). A first cladding region (113) is disposed on the first stack of distributed Bragg reflectors (109). An active area (117) is disposed on the first cladding region (113) with a second cladding region (123) disposed on the active area (117). A second stack of distributed Bragg reflectors (127) is disposed on the second cladding region (123). The dot patterned features produce an offset in the stacks of reflectors and a portion of the second stack of distributed Bragg reflectors is oxidized, using the offset, to limit the current path.