| 摘要 |
PROBLEM TO BE SOLVED: To ease the requirements of the minimum characteristics and the allowable level of mismatching of lithograph by a double side wall spacer region, by double forming a side wall spacer structural body between a gate and a source and between a gate and a drain. SOLUTION: A polysilicon gate 12 of a silicon wafer is separated from a channel region 13 by a gate dielectric film 14 like a silicon dioxide. Next, a device on the surface of a substrate 10 made of monocrystal silicon is surrounded by thick field oxide region 16, and a pair of a first side wall spacers 17A, 17B and the gate 12 are separated from the surfaces of a source 11 and a drain 15. Moreover, in adjacent to these first side wall spacers 17A, 17B, a pair of second side wall spacers 18A, 18B are formed, and a side wall spacer structural body is made double. By doing this, a double side wall spacer region can ease the requirements of the minimum characteristics and the allowable level of mismatching of lithograph. |
