发明名称 |
Semiconductor device with insulating layer |
摘要 |
A semiconductor device (10) including an insulation film (13) covering it to expose electrodes or pads (12) fabricated in the chip (10) and wiring lines (14,16) located on the insulation film (13) and connected to the respective electrodes or pads (12) is produced by a method which comprises: providing a semiconductor chip (10) having an insulation film (13) covering the chip (10) so as to expose a conductor layer for electrodes or pads (12) fabricated in the chip (10), ion milling the surface of the chip (10), and dry etching the surface of the chip (10) provided with the insulation film (13) and the patterned conductor layer (14) with nitrogen gas. <IMAGE> |
申请公布号 |
EP1050905(A3) |
申请公布日期 |
2001.09.12 |
申请号 |
EP20000303721 |
申请日期 |
2000.05.03 |
申请人 |
SHINKO ELECTRIC INDUSTRIES CO. LTD. |
发明人 |
ITO, DAISUKE;KITAHARA, YUICHI |
分类号 |
H01L21/60;H01L21/768 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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