| 摘要 |
There is provided a method of carrying out plasma-enhanced etching of a vanadium oxide film, including the steps of (a) depositing one of a resist film and an insulating film on a vanadium oxide film, (b) patterning the one of a resist film and an insulating film to thereby form a mask, and (c) carrying out plasma-enhanced etching of a vanadium oxide film through the use of an etching gas containing a fluoride gas at a volume ratio of 10% or greater, which fluoride having fluorine (F) atoms by six or greater. The method raises an etching ratio of a vanadium oxide film to an underlying insulating layer, resulting in that it is possible to prevent the underlying insulating layer from being etched together, when the vanadium oxide film is etched.
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