| 摘要 |
An LCD includes a substrate; a first transistor formed on the substrate, the first transistor having a MILC (metal-induced lateral crystallization) region formed on a substrate with a semiconductor material and including a channel region; and MIC (metal-induced crystallization) regions formed on sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region; a second transistor formed on the substrate, the second transistor having a MILC (metal-induced lateral crystallization) region formed on the same substrate with a semiconductor material and including a channel region; and MIC (metal-induced crystallization) regions formed on sides of the MILC region with a semiconductor material, wherein at least one boundary between the MILC region and one of the MIC regions is located outside the channel region; and a third transistor formed on the substrate, the third transistor having an amorphous silicon layer in an active layer.
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