| 摘要 |
A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise Ga1-x-yAlxInyN1-z-wPzAsw, or, preferably, Ga1-xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 10<5 >cm<-2>. A method of making the photodetector is also disclosed.
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