| 摘要 |
PROBLEM TO BE SOLVED: To facilitate trimming of a shunt resistance value in a constant current control circuit device composed by using a current mirror circuit and improve a temperature property of the device. SOLUTION: An on-state resistance of a P channel MOSFET 12 is used for a shunt-resistance of a current control circuit 11 and a temperature characteristics correction circuit 15 composed of a series circuit of an emitter resistance 13 and a CrSi resistance 14 is connected to the gate of the MOSFET 12. Then, a temperature characteristics of the on-resistance of the MOSFET 12 is corrected by controlling the gate potential of the MOSFET 12 by means of the correction circuit 15. COPYRIGHT: (C)2005,JPO&NCIPI
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