Methods of forming gate structures in nonvolatile memory devices having curved side walls formed using oxygen pathways

摘要

Gate structures of a non-volatile integrated circuit memory device can include a thermal oxidation layer on a substrate beneath the gate structure that defines a side wall of the gate structure. An oxygen diffusion barrier layer is on the side wall of the gate structure and a floating gate is on the thermal oxidation layer and has a curved side wall portion. Related methods are also discussed.