发明名称 CIRCUIT AND METHOD FOR OUTPUTTING TEMPERATURE DATA OF SEMICONDUCTOR MEMORY APPARATUS
摘要 A circuit and a method for outputting temperature data of a semiconductor memory device are provided to remove an output error actually and completely. A temperature sensing circuit(500) generates a temperature voltage corresponding to temperature variation. An analog-digital conversion part(300) converts the temperature voltage into a first temperature code. A temperature data correction part(400) outputs a second temperature code by correcting the error of the first temperature code using a correction code. The temperature sensing circuit comprises a temperature sensor(110), a voltage adjustment part(120) and a fuse set(130). The temperature sensor outputs the temperature voltage inversely proportional to internal temperature of the semiconductor memory device and a first reference voltage with constant level regardless of temperature variation. The voltage adjustment part outputs a second reference voltage to define upper limit and lower limit of the temperature voltage. The fuse code adjusts plural resistance values according to cutting state of a plurality of fuses.
申请公布号 KR20080033588(A) 申请公布日期 2008.04.17
申请号 KR20060099180 申请日期 2006.10.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 JEONG, CHUN SEOK;LEE, KANG SEOL
分类号 G11C7/10;G11C5/14;G11C7/04;G11C11/406 主分类号 G11C7/10
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