METHOD OF DOPING A SUBSTRATE

摘要

A substrate doping method is provided to prevent the conventional problems previously caused by fluorine by performing ion implantation to a semiconductor substrate surface as a plasma method using a doping gas containing carbon and boron. A semiconductor substrate containing silicon is loaded into a process chamber(S100). A doping gas containing carbon and boron is supplied into the process chamber(S110). The doping gas is ionized and excited to a plasma state(S120). Carbon ions and boron ions are injected under the surface of the semiconductor substrate(S130). At this time, the boron ions functions as a hole, and the carbon ions restrict the diffusion of the boron ions. Thus, concentration of the boron is kept uniformly, and the electrical property is improved.