| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor light emitting element capable of improving externally extraction efficiency of light emitted from a light emitting layer, and of reducing a drive voltage of the element; and its manufacturing method. <P>SOLUTION: This nitride-based semiconductor light emitting element includes a reflecting layer formed on a support substrate, and a p-type nitride-based semiconductor layer, the light emitting layer and an n-type nitride-based semiconductor layer sequentially formed over the reflecting layer. In the nitride-based semiconductor light emitting element, irregularity is formed on a light extraction surface located over the n-type nitride-based semiconductor layer, a high-refractive-index film is formed on the n-type nitride-based semiconductor layer, and the upper surface of the high-refractive-index film is used as the light extraction surface. <P>COPYRIGHT: (C)2009,JPO&INPIT |
