发明名称 WIDE-RANGE LOW-NOISE AMPLIFIER
摘要 <p>A wideband low-noise amplifier of the present invention is designed such that an input terminal is connected to a base of a first transistor, one terminal of a first passive element, and one terminal of a third passive element; an emitter of the first transistor is grounded; a collector of the first transistor is connected to an output terminal, a base of a second transistor, one terminal of a capacitor, and one terminal of a second passive element; the other terminal of the first passive element is connected to the other terminal of the capacitor; an emitter of the second transistor is connected to the other terminal of the third passive element; and a power terminal is connected to a collector of the second transistor and the other terminal of the second passive element, wherein impedance of the third passive element is determined based on impedance of the first transistor whose emitter size is determined to suite desired saturation level of amplification, thus establishing input impedance matching.</p>
申请公布号 EP2148433(A1) 申请公布日期 2010.01.27
申请号 EP20080752875 申请日期 2008.05.16
申请人 NIPPON TELEGRAPH AND TELEPHONE CORPORATION 发明人 KAWASHIMA, MUNENARI;YAMAGUCHI, YOU;UEHARA, KAZUHIRO;NISHIKAWA, KENJIRO
分类号 H03F1/26;H03F1/34;H03F3/189;H03F3/19 主分类号 H03F1/26
代理机构 代理人
主权项
地址