THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND FLAT PANEL DISPLAY HAVING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor using a compound semiconductor containing oxygen as an active layer, to provide a method of manufacturing the thin film transistor, and to provide a flat panel display having the thin film transistor. SOLUTION: The thin film transistor includes: a gate electrode formed on a substrate; an active layer insulated from the gate electrode by a gate insulating film and composed of a compound semiconductor containing oxygen; a protection layer formed on the active layer; and a source electrode and a drain electrode which are brought into contact with the active layer: wherein the protection layer is composed of an oxide containing inorganics having bonding strength with oxygen. COPYRIGHT: (C)2010,JPO&INPIT