发明名称 |
Radiation detector and fabrication process |
摘要 |
A monolithic integrated radiation detector includes a photodetector and a scintillator deposited directly on the photodetector. Preferably the photodetector is silicon and the scintillator is a rare earth phosphor. The rare earth phosphor is crystal lattice matched to the silicon by a transitional layer epitaxially grown therebetween. |
申请公布号 |
US9360565(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201012779355 |
申请日期 |
2010.05.13 |
申请人 |
Translucent, Inc. |
发明人 |
Clark Andrew;Williams David L. |
分类号 |
G01T1/26;G01T1/202;G01T1/20 |
主分类号 |
G01T1/26 |
代理机构 |
Parsons & Goltry |
代理人 |
Parsons Robert A.;Goltry Michael W.;Parsons & Goltry |
主权项 |
1. A monolithic integrated radiation detector comprising:
a substrate of single crystal semiconductor material; a photodetector.of a single crystal material formed on and crystal lattice matched to the substrate; and a scintillator of single crystal material formed on and crystal lattice matched to the photodetector. |
地址 |
Palo Alto CA US |