| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING EMBEDDED CRYSTALLINE BACK-GATE BIAS PLANES, RELATED DESIGN STRUCTURE AND METHOD OF FABRICATION |
| 摘要 |
A semiconductor device is disclosed. The semiconductor device can include a first dielectric layer disposed on a substrate; a set of bias lines disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer and between the set of bias lines, wherein a thickness of the second dielectric layer is less than a thickness of the first dielectric layer; a patterned semiconductor layer disposed on portions of the second dielectric layer; and a set of devices disposed on the patterned semiconductor layer above the set of bias lines. |
| 申请公布号 |
US2016163879(A1) |
申请公布日期 |
2016.06.09 |
| 申请号 |
US201615009906 |
申请日期 |
2016.01.29 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Adam Thomas N.;Cheng Kangguo;Khakifirooz Ali;Reznicek Alexander;Sreenivasan Raghavasimhan |
| 分类号 |
H01L29/786;H01L29/06;H01L29/423;H01L27/12 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first dielectric layer disposed on a substrate; a set of bias lines disposed on the first dielectric layer; a second dielectric layer disposed on the first dielectric layer and between the set of bias lines, wherein a thickness of the second dielectric layer is less than a thickness of the first dielectric layer; a patterned semiconductor layer disposed on portions of the second dielectric layer; and a set of devices disposed on the patterned semiconductor layer above the set of bias lines. |
| 地址 |
Grand Cayman KY |
