SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

主权项

1. A semiconductor device comprising:
a substrate including a first active region, a second active region and a field region, the field region between and directly contacting the first and the second active regions; an interlayer dielectric layer disposed on or above the substrate and including a trench, wherein the interlayer dielectric layer extends from the first active region to second active region; a gate structure formed in the trench extends from the first active region to second active region; and a spacer formed on the sidewall of the gate structure, wherein the top surface of the spacer and the top surface of the gate structure are substantially coplanar with each other, and wherein the gate structure comprises:
a gate dielectric layer formed along sidewalls and a bottom surface of the trench;a p-type metal gate electrode formed on the first active region; andan n-type metal gate electrode formed on the second active region, wherein the p-type metal gate electrode and the n-type metal gate electrode contact each other at a contact surface therebetween which is closer to the first active region than to the second active region.