Semiconductor Devices with Transistor Cells and Thermoresistive Element

摘要

A semiconductor device includes a first load terminal electrically coupled to a source zone of a transistor cell. A gate terminal is electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell. The source and body zones are formed in a semiconductor portion. A thermoresistive element is thermally connected to the semiconductor portion and is electrically coupled between the gate terminal and the first load terminal. Above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.

主权项

1. A semiconductor device, comprising:
a first load terminal electrically coupled to a source zone of a transistor cell; a gate terminal electrically coupled to a gate electrode which is capacitively coupled to a body zone of the transistor cell, the source and body zones being formed in a semiconductor portion; and a thermoresistive element thermally connected to the semiconductor portion and electrically coupled between the gate terminal and the first load terminal, wherein above a maximum operation temperature specified for the semiconductor device, an electric resistance of the thermoresistive element decreases by at least two orders of magnitude within a critical temperature span of at most 50 Kelvin.