发明名称 |
SEMICONDUCTOR STRUCTURE WITH BOTTOM-FREE LINER FOR TOP CONTACT |
摘要 |
A semiconductor structure includes a lined bottom contact filled with conductive material. The structure further includes a layer of dielectric material surrounding sides of the lined bottom contact, a top contact on the bottom contact, the top contact having a partial liner only along sides thereof with an absence of the liner at a bottom thereof and being filled with the conductive material, and a layer of the dielectric material surrounding sides of the partially lined top contact. Fabrication of the bottom-liner free top contact includes providing a starting structure, the structure including a lined bottom contact filled with conductive material, being surrounded by a layer of dielectric material and having a planarized top surface. The method further includes creating a top layer of dielectric material above the planarized top surface, creating a layer of liner material above the top dielectric layer, creating a top contact opening to the bottom contact, lining the top contact opening with a liner material, removing the liner at a bottom of the top contact opening, exposing the bottom contact, while preserving a portion of the liner on the top dielectric layer sufficient to allow adhesion of a subsequent conductive material, and filling the contact opening with the conductive material. |
申请公布号 |
US2016163645(A1) |
申请公布日期 |
2016.06.09 |
申请号 |
US201414563284 |
申请日期 |
2014.12.08 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
KAMINENI Vimal K.;XIE Ruilong |
分类号 |
H01L23/535;H01L21/768;H01L23/532;H01L23/522;H01L23/528 |
主分类号 |
H01L23/535 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method, comprising:
providing a starting structure, the structure comprising a lined bottom contact filled with conductive material, being surrounded by a layer of dielectric material and having a planarized top surface; creating a top layer of dielectric material above the planarized top surface; creating a layer of liner material above the top dielectric layer; creating a top contact opening to the bottom contact; lining the top contact opening with a liner material; removing the liner at a bottom of the top contact opening, exposing the bottom contact, while preserving a portion of the liner on the top dielectric layer sufficient to allow adhesion of a subsequent conductive material; and filling the contact opening with the conductive material. |
地址 |
Grand Cayman KY |