SELF-ALIGNED DOUBLE PATTERNING PROCESS FOR TWO DIMENSIONAL PATTERNS

摘要

One method includes forming a mandrel element above a hard mask layer, forming first and second spacers on the mandrel element, removing the mandrel element, a first opening being defined between the first and second spacers and exposing a portion of the hard mask layer and having a longitudinal axis extending in a first direction, forming a block mask covering a middle portion of the first opening, the block mask having a longitudinal axis extending in a second direction different than the first direction, etching the hard mask layer in the presence of the block mask and the first and second spacers to define aligned first and second line segment openings in the hard mask layer extending in the first direction, etching recesses in a dielectric layer disposed beneath the hard mask layer based on the first and second line segment openings, and filling the recesses with a conductive material.

主权项

1. A method, comprising:
forming a patterning template including a plurality of lines above a hard mask layer, wherein a portion of said hard mask layer is exposed between adjacent lines; forming a block mask covering a middle portion of said plurality of lines; etching said hard mask layer in the presence of said block mask and said patterning template to define aligned first and second line segment openings in said hard mask layer; removing said block mask and said patterning template; forming a cut mask above said hard mask layer after removing said block mask and said patterning template, said cut mask being patterned to define an opening disposed between said first and second line segment openings and exposing said hard mask layer; etching said hard mask layer in the presence of said cut mask to define a line opening in said hard mask layer between said first and second line segment openings; etching recesses in a dielectric layer disposed beneath said hard mask layer based on said first and second line segment openings and said line opening; and filling said recesses with a conductive material.