| 摘要 |
PURPOSE:To obtain a novel photoelectric conversion element, in which a novel window material, which can be substituted for a-SiCx, etc., is formed without using carbon and nitrogen, by constituting an N type silicon layer in size wider than the optical forbidden band width of an I type amorphous silicon layer by decomposition and arranging an N type amorphous silicon layer on the beam incident side. CONSTITUTION:Disilane corresponds to n=2 in silane represented by a general formula SinH2n+2, and has a chemical formula Si2H6. A V group element compound, such as PH3 (phosphine), AsH3 (arsine) or the like is employed as an N type conductivity donative substance, and it is preferable on the control of safety and the quantity of doping that said substance is used under the state in which it is diluted normally by H2 or He. The rate of these substances used to disilane is 0.1-5vol.pt. to 100vol.pt. disilane. |
