Method of calibrating or exposing a lithography tool

摘要

A method of calibrating or monitoring an exposing tool including forming a substrate pattern in a substrate, wherein forming the substrate pattern includes providing a first patterned photo resist layer having an etch coating layer disposed thereon and using the first patterned photo resist layer and the etch coating layer to pattern an underlying layer. The patterned underlying layer is then used as a masking element when etching the substrate pattern into the substrate. A second photo resist pattern is formed over the substrate pattern. An overlay measurement is executed of the second photo resist pattern to the substrate pattern.

主权项

1. A method of calibrating an exposing tool, the method comprising:
forming a substrate pattern in a substrate, wherein forming the substrate pattern includes:
providing a first patterned photo resist layer having an etch coating layer disposed thereon;using the first patterned photo resist layer and the etch coating layer to pattern an underlying layer;using the patterned underlying layer as a masking element when etching the substrate pattern; forming a second photo resist pattern over the substrate pattern; and executing an overlay measurement of the second photo resist pattern to the substrate pattern.