| 发明名称 | Process tool having third heating source and method of using the same | ||
| 摘要 | A processing tool includes a chamber configured to receive a wafer, the chamber having a sidewall and a sidewall heating source configured to heat the sidewall of the chamber. The processing tool further includes a first heating source configured to provide energy to an interior of the chamber through a top surface of the chamber and a second heating source configured to provide energy to the interior of the chamber through a bottom surface of the chamber. The sidewall heating source is separate from the first heating source and the second heating source. | ||
| 申请公布号 | US9373529(B2) | 申请公布日期 | 2016.06.21 |
| 申请号 | US201314060998 | 申请日期 | 2013.10.23 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Liu Su-Hao;Lin Chien-Hung;Fang Ziwei;Liao Ker-Hsun |
| 分类号 | H01L21/67 | 主分类号 | H01L21/67 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A processing tool comprising: a chamber configured to receive a wafer, the chamber having a sidewall; a sidewall heating source configured to heat the sidewall of the chamber, wherein the sidewall heating source is configured to receive a heating fluid; a first heating source configured to provide energy to an interior of the chamber through a top surface of the chamber; and a second heating source configured to provide energy to the interior of the chamber through a bottom surface of the chamber, wherein the sidewall heating source is separate from the first heating source and the second heating source. | ||
| 地址 | TW | ||