Method for manufacturing semiconductor device

摘要

An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.

主权项

1. A method for manufacturing a semiconductor device comprising:
forming a semiconductor layer that comprises an oxide semiconductor including indium; processing the semiconductor layer by wet etching to form an island-shaped semiconductor layer; processing the island-shaped semiconductor layer by dry etching to form a recessed portion in the island-shaped semiconductor layer; and performing oxygen radical treatment on the recessed portion.